stidivot

本研究探討場發射金屬氧化半導電晶體（MOSFET）淺溝槽隔離絕緣層（Shallow Trench Isolation，STI）與鄰近電晶體主動區的高度差（Step-height）對元件特性的影響。

STI divot formation is eliminated or substantially reduced by employing a very thin nitride polish stop layer, e.g., no thicker than 400 Å. The very thin ...

For searches using boolean logic, the default operator is AND with left associativity. Note: this means safety OR seat belt is searched as ...

This paper will discuss the effect of etching methods for the STI divot feature and the impact of divot depth on the performance of 28m HKMG logic devices ...

由 Z Sui 著作 · 2022 — There are 3~5% performance improvement by STI divot increased around 30A of Core device nominal P and SRAM PU was been shown on 28nm HKMG platform. And the GOI ...

由 嚴永民 著作 · 2011 — Shallow Trench Isolation (STI) techniques are essential for semiconductor device for reducing electrical interferences between devices of sub-micro and sub 100- ...